PART |
Description |
Maker |
PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-AT PS21963-CT PS21963-T PS21963-TW |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
PS21963-A |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-AET PS21963-CET PS21963-ET PS21963-ETW |
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21965-T |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
|
APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
APT6010JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
APT6025BLL APT6025SLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology
|
APT6013JFLL |
POWER MOS 7 600V 39A 0.130 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|